MJE13009 PDF

The MJE is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for and . MJE HIGH VOLTAGE FAST-SWITCHING. NPN POWER TRANSISTOR s. STMicroelectronics PREFERRED. SALESTYPE s. HIGH VOLTAGE CAPABILITY. Bipolar (BJT) Transistor NPN V 12A 4MHz 2W Through Hole TOAB.

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MJE NPN Power Transistor at Rs 30 /piece | Transistors – Diode House, Mumbai | ID:

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MJE13009 Bipolar Transistor

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NPN power transistor,MJE13009 12A

Minimum monthly payments are required. Learn More – opens in a new window or tab Any international shipping is paid in part to Pitney Bowes Inc. The MJE is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. Learn more – opens in a new window or tab. See all dalbanicorporation has no other items for sale.

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MJE Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

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